FUNDAMENTAL PROBLEMS IN PULSED-BIAS ARC DEPOSITION

金属学报(英文版), 2002, 15(1): 91-103.

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1.The State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian Uni-versity of Technology, Dalian 116024, China

2.The State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian Uni-versity of Technology, Dalian 116024, China

3.Department of Electromagnetic Engineering, Dalian University of Technology, Dalian 116024, China

4.Department of Electromagnetic Engineering, Dalian University of Technology, Dalian 116024, China

5.The State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian Uni-versity of Technology, Dalian 116024, China;Institute of Metals Research, The Chinese Academy of Sciences, Shenyang 110016, China

6.The State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian Uni-versity of Technology, Dalian 116024, China

7.The State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian Uni-versity of Technology, Dalian 116024, China

8.The State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian Uni-versity of Technology, Dalian 116024, China

9.Institute of Metals Research, The Chinese Academy of Sciences, Shenyang 110016, China

基金项目: 国家自然科学基金(50071017)

FUNDAMENTAL PROBLEMS IN PULSED-BIAS ARC DEPOSITION

Keywords： arc deposition

Arc deposition, a widely used surface coating technique, has disadvantages such aslarge droplet size and high deposition temperature. Recent trend in its renovation isthe introduction of pulsed bias at the substrate. The present paper attempts to describethe deposition process of TiN films using this technique with emphasis laid on theunderstanding of the basic problems such as discharge plasma properties, temperaturecalculation, and droplet size reduction. We show that this technique improves thefilm microstructure and quality, lowers deposition temperature, and allows coatingson insulating substrates. After analyzing load current oscillation behaviors, we havedetermined that the plasma load is of capacitance nature due to plasma sheath and thatit is equivalent to a circuit element consisting of parallel capacitance and resistance.At last, we point out the remaining problems and future development of the pulsed-biasarc deposition technique.

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FUNDAMENTAL PROBLEMS IN PULSED-BIAS ARC DEPOSITION

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