采用SEM，TEM对金刚石膜-硬质合金基体横截面的形态进行了研究，探讨了甲烷含量对CVD金刚石膜-基横截面各组织层次的影响结果表明，经化学侵蚀脱钻和等离子体刻蚀脱碳预处理的YG8硬质合金基体上所沉积的金刚石膜-基横截面组织的典型层次依次为：金刚石薄膜／薄的石墨碳中间层／细小的WC层／残留的脱碳层（η相+W相）／残留的疏松层／YG8原始基体甲烷含量对CVD金刚石膜-基横截面各组织层次的形成有显著的影响
The cross-sectional morphologies and microstructures of CVD diamond thin films synthesized onto the cobalt cemented tungsten carbide (YGS) substrate have been observed by means of SEM and TEM. The results show that after chemically cobalt-removed and plasma-etching decarbonized treatments the sequence of cross-sectional structure is as follows:diamond thin film, graphite carbon thin film, small WC grains layer; retained decarbonized layer (W and η phases), residual porous layer, YG8 cemented carbide substrate. Methane concentrations have obvious influences on the formation and thickness of above-mentioned layers.
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