通过微弧氧化方法在SiC/2024铝基复合材料表面沉积出较厚的陶瓷膜。测定陶瓷膜的生长曲线，用扫描电镜、X射线衍射分析了膜层的形貌和相组成。着重分析了颗粒增强体在膜层内的形态变化，提出一个金属基复合材料微弧氧化膜生长模型。结果表明，微弧放电烧结作用下，膜层内SiC增强体大部分已被熔化并氧化，只有少数残余的SiC颗粒仍然保留在靠近界面的膜层内。SiC增强体阻碍了微弧氧化膜的生长，但它并没有破坏微弧氧化膜的完整性，这同复合材料阳极氧化膜结构完全不同。
A thick ceramic film on SiC/2024 aluminum matrix composite was fabricated by plasma microarc discharge method. The growing curve of film was determined, and the morphology and phase composition of film were analyzed by scanning electron microscopy and X-ray diffraction. The morphology and distribution of reinforcement particles were emphatically observed, and then a growth model of microarc oxidation film on metal matrix composites was proposed. Under microarc discharge sintering, most SiC reinforcement particles have been oxidized, but only a few residual SiC particles still remain in the film close to the composite/film interface. Although the SiC particles hinder the film growth, the continuity of film has not been disrupted. That is completely different from conventional anodizing on metal matrix composites.
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