采用磁控溅射沉积方法制备Mg2 Si半导体薄膜.首先在Si衬底上沉积Mg膜,随后低真空热处理.采用X射线衍射、扫描电镜、拉曼光谱对Mg2Si薄膜的结构进行表征.研究了在低真空(10-1～10-2Pa)条件下热处理温度(350～550℃)和热处理时间(3～7h)对Mg2Si薄膜形成的影响.结果表明,低真空热处理条件下制备了单一相Mg2Si半导体薄膜,400～550℃热处理4～5h是最佳的热处理条件.在拉曼谱中256和690cm-1处观察到两个散射峰,这与Mg2Si的拉曼特征峰峰位一致.
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