对电流在氮化硅陶瓷放电等离子烧结过程中的作用进行了研究,采用放电等离子烧结工艺,分别对含助烧剂(Y2O3/MgO)氮化硅(α-Si3N4)粉体,以及用纯氮化硅粉体包覆的含助烧剂粉体进行了烧结;并且考虑到包覆层引起的试样烧结温度的差异,在较低温度进行了无包覆试样烧结.实验结果表明:包覆层明显抑制了氮化硅陶瓷的相转变及晶粒生长.通过与低温烧结试样进行对比,排除了包覆层引起的温度差异的影响,认为是SPS电场在氮化硅的烧结过程中通过导电的液相形成电流,促进了溶解在液相中的氮化硅的扩散,从而加快了相转变及柱状晶生长这些和溶解析出相关的过程.
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