用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为HPCVD)制备了MgB_2超薄膜.在背景气体压强、B_2H_6的流量和成膜时间等条件一定的情况下,当氢气的流量从200到400sccm范围内变化时,观察了其对成膜的影响.结果显示,随氢气流量增大,膜表面粗糙度增大,同时膜面的连接性变好,伴随着样品的超导转变温度得到提高.对于平均厚度是10nm和15nm的样品,氢气流量分别是200sccm和300sccm时,T_c分别是26K和33K与28K和37K.
We fabricated ultra-thin MgB_2 films by hybrid physical-chemical vapor deposition. The effect of H_2 flow rate ranging from 200～400sccm on the fabrication of the film was observed, with the same flow rate of B_2H_6 and unified pressure for regulated time. The statistics show that the increase of H_2 flow rate will increase the mean roughness of the film and enhance the connection between island-crystals therefore enlarger the mean size of island-crystals on the surface. An increase of T_c depending on the H_2 flow rate was also observed. The ultra-thin films with the thickness of 10nm deposited in a H_2 flow rate of 200sccm obtained T_c of 26K, while a H_2 flow rate of 300sccm obtained T_c of 33K. Meanwhile, T_c of 15nm ultra-thin films changed from 28K to 37K when H_2 flow rate changed as above.
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