采用PVD和CVD技术制备Cu/TiN/PI试样.研究表明,TiN薄膜可以有效地阻挡Cu向PI基板内部扩散.CVD工艺制备的Cu膜内部残余应力很小,Cu膜有相对高的结合强度;而PVD制备的Cu膜,在有TiN阻挡层存在的情况下,Cu膜内存在拉应力,拉应力降低了Cu膜结合强度.300℃退火可以消除膜内残余应力,结合强度提高.
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