Fabrication and Properties of DC Magnetron Sputtered Indium Tin Oxide on Flexible Plastic Substrate

材料科学技术（英文）, 2009, 25(1): 119-122.

^1, , ^2, , ^3, , ^4, , ^5,

1.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

2.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

3.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

4.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

5.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

基金项目: 国家自然科学基金(60425101)

Fabrication and Properties of DC Magnetron Sputtered Indium Tin Oxide on Flexible Plastic Substrate

Hui Lin ^1, , Junsheng Yu ^2, , Nana Wang ^3, , Shuangling Lou ^4, , Yadong Jiang ^5,

1.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

2.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

3.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

4.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

5.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China

Keywords： Flexible Organic light-emitting diodes

Indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates at low temperature by DC magnetron sputtering from an In-Sn (90-10 wt pct) alloy target were studied. The correla-tion between deposition conditions and ITO property was systematically investigated and characterized. These as-deposited ITO films were used as the anode contact for flexible organic light-emitting diodes (FOLEDs). The fabricated FOLEDs with a structure of PET/ITO/NPB (50 nm)/Alq (20 nm)/Mg:Ag (100 nm) showed a maximum luminance of 2125 cd/m2 at 13 V.

参考文献

[1]	C W Tang;S A VanSlyke .[J].Applied Physics Letters,1987,51:913.
[2]	Y Jiang;J Wang;J Yu;W Li X Wei Z Wu .[J].Japanese Journal of Applied Physics,2007,46:523.
[3]	J Yu;W Li;Y Jiang;L Li .[J].Japanese Journal of Applied Physics,2007,46:31.
[4]	J Wang;J Yu;H Lin;Y Jiang S Lou G Yang .[J].Semiconductor Science and Technology,2007,22:25.
[5]	B Lucas;W Rammal;A Moliton .[J].EPJ Appl Phys,2006,34:179.
[6]	D R Gibson;I Brinkley;J M Walls .[J].Spie,2004,5618:156.
[7]	A. Salehi .The effects of deposition rate and substrate temperature of ITO thin films on electrical and optical properties[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1998(1/2):214-218.
[8]	V Craciun;D Craciun;Z Chen;J Hwang R K Singh .[J].Applied Surface Science,2000,168:118.
[9]	F. O. Adurodija;H. Izumi;T. Ishihara;H. Yoshioka;H. Matsui;M. Motoyama .Low-temperature growth of low-resistivity indium-tin-oxide thin films by pulsed laser deposition[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2000(2/3):641-648.
[10]	J H Shin;S H Shin;J I Park;H H Kim .[J].Journal of Applied Physics,2001,89:5199.
[11]	Y Shigesato;D C Paine .[J].Thin Solid Films,1994,238:44.
[12]	T Minami;H Sonohara;T Kakumu;S Takata .[J].Thin Solid Films,1995,270:37.
[13]	V Singh;B Saswat;S Kumar .[J].Materials Research Society,2005,869:139.
[14]	S Uthanna;P S Reddy;B S Naidu;P Jayarama Reddy .[J].Vacuum,1996,47:91.
[15]	K Kim;Y Tak;H Park;K Lee J Lee .[J].Mat Research Society,2002,78:809.
[16]	Y S Jung;D W Lee;D Y Jeon .[J].Applied Surface Science,2004,221:136.
[17]	S. H. Shin;J. H. Shin;K. J. Park;T. Ishida;O. Tabata;H. H. Kim .Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1999(12):225-229.

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