采用离子注入技术对射频磁控溅射制备的ZnO薄膜进行N掺杂,通过退火实现了ZnO薄膜的p型转变.利用X射线衍射(XRD)和Hall实验对样品热退火前后的性能进行了研究.实验数据表明,该掺杂方法能得到稳定的p型ZnO薄膜,其电学性能随热退火温度的升高和时间的延长而进一步改善,其中在950℃、7min退火条件时,载流子浓度为1.68E+16cm-3,电阻率为41.5Ω·cm.
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