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用射频磁控溅射法在硅基片上制备了AIN、BN单层膜及AIN/BN纳米多层膜,采用X射线衍射仪、傅立叶变换红外光谱仪、小角度X射线反射仪、高分辨率透射电子显微镜和原子力显微镜等对其进行了表征.结果表明:AIN/BN多层膜具有(103)择优取向,并且当AIN层厚固定时,随着BN层厚的增加,(103)择优取向得到强化;AIN单层膜及AIN/BN纳米多层膜均呈岛状生长,多层膜界面粗糙度及表面粗糙度均随着BN层厚的增加而减小;多层膜中BN的结构与BN的层厚有关,当AIN层厚保持在4.0 nm且BN层厚为0.32~0.55 nm时,可获得晶态w-BN,当BN层厚增至0.74 nm时,BN呈非晶态.

参考文献

[1] Madan A;Kim IW;Cheng SC;Yashar P;Dravid VP;Barnett SA .Stabilization of cubic AlN in epitaxial AlN/TiN superlattices[J].Physical review letters,1997(9):1743-1746.
[2] Yashar P.;Barnett SA.;Rechner J.;Wang YY.;Wong MS.;Sproul WD.;Chu X. .Stabilization of cubic CrN0.6 in CrN0.6/TiN superlattices[J].Applied physics letters,1998(8):987-989.
[3] Wu ML.;Dravid VP.;Chung YW.;Wong MS.;Sproul WD.;Lin XW. .PREPARATION AND CHARACTERIZATION OF SUPERHARD CNX/ZRN MULTILAYERS[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1997(3 Pt.1):946-950.
[4] Edgar JH.;Eddy CR.;Carosella CA.;Sartwell BD.;Smith DT. .C-BORON ALUMINUM NITRIDE ALLOYS PREPARED BY ION-BEAM ASSISTED DEPOSITION[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):33-38.
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