用射频磁控溅射法在硅基片上制备了AIN、BN单层膜及AIN/BN纳米多层膜,采用X射线衍射仪、傅立叶变换红外光谱仪、小角度X射线反射仪、高分辨率透射电子显微镜和原子力显微镜等对其进行了表征.结果表明:AIN/BN多层膜具有(103)择优取向,并且当AIN层厚固定时,随着BN层厚的增加,(103)择优取向得到强化;AIN单层膜及AIN/BN纳米多层膜均呈岛状生长,多层膜界面粗糙度及表面粗糙度均随着BN层厚的增加而减小;多层膜中BN的结构与BN的层厚有关,当AIN层厚保持在4.0 nm且BN层厚为0.32~0.55 nm时,可获得晶态w-BN,当BN层厚增至0.74 nm时,BN呈非晶态.
参考文献
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