采用射频反应磁控溅射法在Mo电极上沉积了AlN薄膜.研究了溅射气压、靶基距、溅射功率、衬底温度及N_2含量等不同工艺条件对AlN薄膜择优取向生长的影响.用XRD分析了薄膜的择优取向,用原子力显微镜、高分辨场发射扫描电镜表征了薄膜的形貌.实验结果表明,靶基距和溅射气压的减小,衬底温度及溅射功率的升高有利于AlN(002)晶面的择优取向生长.氮氩比对AlN薄膜择优取向生长影响较小,N_2≥50%(体积分数)时均可制得高c轴择优取向的AlN薄膜.经优化工艺参数制备的AlN柱状晶薄膜适用于体声波谐振滤波器的制备.
AlN thin films were deposited on Mo electrode by RF-reactive magnetron sputtering. Effect of sputtering pressure, target-substrate distance, sputtering power, substrate temperature and N_2 concentration on the orientation of AlN thin films was studied. The orientation of AlN films were characterized by X-ray diffraction (XRD). The microstructures of films were observed by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM). The results revealed that c-axis orientation of AlN thin films can be improved by the decrease of sputtering pressure, target-substrate distance and the increase of sputtering power and substrate temperature. The N_2 concentration has little effect on the crystallinity of AlN films. AlN films preferred c-axis orientation when the N_2 concentration exceeds 50vol%. The AFM and FESEM photographs also show that the AlN film has a smooth surface texture with uniform grain size and a highly ordered column structure which is fit for preparation of FBAR devices.
参考文献
| [1] | Martin F;Jan ME;Belgacem B;Dubois MA;Muralt P .Shear mode coupling and properties dispersion in 8 GHz range AlN thin film bulk acoustic wave (BAW) resonator[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):341-343. |
| [2] | Johannes Enlund;David Martin;Ventsislav Yantchev .[J].Sensors and Actuators A:Physical,2008,141(02):598. |
| [3] | Kuan-Hsun Chiu;Jiann-Heng Chen;Hong-Ren Chen;Ruey-Shing Huang .Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(11):4819-4825. |
| [4] | Jin-Bock Lee;Jun-Phil Jung;Myung-Ho Lee;Jin-Seok Park .Effects of bottom electrodes on the orientation of AlN films and the frequency responses of resonators in AlN-based FBARs[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(1):610-614. |
| [5] | Toshihiro Kamohara;Morito Akiyama;Naohiro Ueno;Kazuhiro Nonaka;Noriyuki Kuwano .Influence of aluminum nitride interlayers on crystal orientation and piezoelectric property of aluminum nitride thin films prepared on titanium electrodes[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(11):4565-4569. |
| [6] | Jakkaraju R;Henn G;Shearer C .[J].Microelectronic Engineering,2003,70(2-4):566. |
| [7] | Gu HS;Zhang K;Hu G;Li WY .Fabrication and charateristics of thim film bulk acoutic resonators with highly c-axis oriented AlN films[J].Chinese physics letters,2006(11):3111-3114. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%