SiC单晶生长研究进展

材料导报, 2002, 16(6): 32-38.

SiC单晶生长研究进展

陈之战 ^1, , 施尔畏 ^2, , 肖兵 ^3, , 庄击勇 ^4,

1.中国科学院上海硅酸盐研究所,上海,200050

2.中国科学院上海硅酸盐研究所,上海,200050

3.中国科学院上海硅酸盐研究所,上海,200050

4.中国科学院上海硅酸盐研究所,上海,200050

基金项目: 国家自然科学基金(50132040) 中国科学院所长基金

关键词： SiC , 单晶生 , 长PVT法

Progress in SiC Single Crystal Growth Research

SiC单晶生长是一个引人注目的研究热点,受到各国政府、科研人员的广泛关注.本文综述了SiC单晶生长的研究进展,对目前广泛采用的PVT法进行了详细介绍,讨论了原料、籽晶、温度、温度梯度、载体气压对单晶生长和质量的影响.对今后的研究方向提出了看法.

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SiC单晶生长研究进展

Progress in SiC Single Crystal Growth Research

参考文献