用磁控溅射法制备了掺杂Sn的Ge2Sb2Te5相变材料薄膜,研究了Sn含量对结晶性能的影响. 薄膜的X射线衍射(XRD)表明,热处理使薄膜发生了从非晶态到晶态的相变, 并出现Sn-Te相.通过示差扫描量热(DSC)实验测出在不同加热速率下非晶态薄膜粉末的结晶峰温度,计算了材料的结晶活化能. 根据结晶动力学分析和结晶活化能数据,掺杂Sn后的Ge-Sb-Te具有更高的结晶速率,用于光存储时将具有更高的擦除速度.
Sn--doped Ge2Sb2Te5 thin films were prepared by RF-sputtering. The effect of Sn-content on their crystallization properties was studied by XRD and DSC. The XRD spectra of the films in the as-deposited and heat-treated states showed that the films changed from amorphous to crystalline states due to heat-treatment and Sn-Te phase appeared. Using DSC data of the amorphous film materials, the activation energies were calculated by measuring the peak crystallization temperatures at different heating rates. It was found that the Ge-Sb-Te-Sn samples have higher activation energy of crystallization than that of the Ge2Sb2Te5 sample.It is concluded from these results that Sn-doping can increase the crystallization rate of the Ge2Sb2Te5 phase-change material, and thereby increase the erasing speed of the material for rewritable optical storage.
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