本文利用密度泛函对LaMnO3的电子结构进行了计算.结果表明,LaMnO3反铁磁绝缘基态的形成主要依赖于Jahn-Teller畸变而不是电子强关联,但电子强关联效应对LaMnO3电子结构的影响巨大.为了获得正确的结果,本文计算时考虑了适当的电子强关联修正.通过分析比较,表明在位的库仑能U取3.5eV是一个合理的选择.
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