采用组合靶,利用射频磁控溅射在260℃的(111)Si片上面制备了不同Ni、La含量比的La-Ni-O薄膜.测试分析结果表明,在La含量较高时,薄膜为无定型结构,并且具有较大的电阻率.当Ni和La含量比＞1∶1.44后,薄膜具有(100)择优取向的赝立方钙钛矿结构,同时具有金属导电特性.随着La过量的减少,晶面间距和面电阻都减小的很快,在Ni和La比例达到1∶1时,电阻率达到了最小值6.4Ω*μm,晶面间距也达到最小值0.389nm.随着Ni过量的增加,晶面间距和面电阻又逐步增大.在Ni过量较多时导致了NiO相和LNO(110)取向的出现.在晶面间距相同时,相对于La,Ni含量的过剩对薄膜导电性能具有较大的影响.文中对实验现象从LaNiO3薄膜的导电机理出发给出了比较合理的解释.
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