采用混酸和二甲亚砜对碳纳米管进行官能化修饰,实验发现经化学修饰后对多壁碳纳米管膜的电学性质有明显影响.经化学修饰后的碳纳米管膜电阻由结电阻和管电阻组成,未经化学修饰的碳纳米管膜电阻主要由碳纳米管管电阻决定.碳纳米管经化学修饰后,碳纳米管结增多,碳纳米管管电阻降低而碳纳米管结电阻增大.未经修饰的碳纳米管膜电阻随着温度的升高而略有增大,呈金属性;经混酸修饰的碳纳米管膜电阻随着温度的升高而减小,呈半导体性.
参考文献
| [1] | Postma H;Teepen T;Yao Z et al.Carbon nanotube singleelectron transistors at room temperature[J].Science,2001,293(5527):76. |
| [2] | Zhou C;Jing K;Yenilmez E et al.Modulated chemical doping of individual carbon nanotubes[J].Science,2000,290(5496):1552. |
| [3] | Rueckes T;Kim T;Joselevich E et al.Carbon nanotubebased nonvolatile random access memory for molecular computing[J].Science,2000,289(5476):94. |
| [4] | Bachtold A;Hadley P;Nakanishi T et al.Logic circuits with carbon nanotube transistors[J].Science,2001,294(5545):1317. |
| [5] | Kaiser AB.;Roth S.;Dusberg G. .Heterogeneous model for conduction in carbon nanotubes[J].Physical Review.B.Condensed Matter,1998(3):1418-1421. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%