Growth and ordering of coherently strained Ge-rich islands in Ge/Si single layer and multilayer systems and the influence of island arrangements on the evolution of the surface morphology of Si cap layers during deposition by low-pressure chemical vapour deposition(LPCVD) on Si(001)substrates at 700℃ have been investigated by TEM of cross-section and plan-view specimens. At distances between the Ge layers of 35-50nm, vertical order of GeSi islands is observed for Ge-Si bilayer systems and for Ge-Si multilayer systems consisting of 5 layer pairs whereas latgreement with earlier results the vertical ordering in the multilayer system can be understood as result of the elastic interaction between island nuclei forming in the layers with close islands in the elastic interaction. Characteristic for all Si surfaces are the spatial correlation between the presence of island-induced lattice strain and the appearance of arrays of larger square-shaped of the control of growth parameters and of the island-induced strain state for the evolution of the Si top layer surface morphology during LPCVD growth.
参考文献
| [1] | L Vescan;A Hartmann;K Schmidt;C.Dieker H.Lüth and W.Jager.[J].Applied Physics Letters,1992:2183. |
| [2] | L Vescan;W Jager;C Dieker;K Schmidt A Hartmann and H Lüth.[J].Materials Research Society Symposium Proceedings:23. |
| [3] | K.Tillmann;H.Trinkaus;W.Jager;E.Kasper K.Lyutovich.Silicon Germanium and SiGe:Carbon EMIS Data Review Series No.24[M].The Institution of Electrical Engineers,London,2000:63. |
| [4] | L Vescan;T Stoica.[J].Journal of Luminescence,1999:485. |
| [5] | T Stoica;L Vescan.[J].Journal of Crystal Growth,1993:32. |
| [6] | I N Stranski;L Krastanow.[J].Sitzungsber Akad Wiss Wien Math-Naturwiss Kl IIb:797. |
| [7] | D.J.Eaglesham;M.Cerullo.[J].Physical Review Letters,1990:1943. |
| [8] | B Rahmati;W Jager;H Trinkaus;R Loo L Vescan and H Lüth.[J].Applied Physics A:Materials Science and Processing:575. |
| [9] | S.Ruvimov;P.Werner;K.Scheerschmidt;U.Gosele J.Heydenreich U.Richter N.N.Ledentsov M.Grundmann D.Bimberg V.M.Ustinov A.Y.Egorov P.S.Kop'ev and Z.I.Alferov.[J].Physical Review,1995:14766. |
| [10] | K Tillmann;W Jager;B Rahmati;H Trinkaus L Vescan and K Urban.[J].Philosophical Magazine A:Physics of Condensed Matter:Structure,Defects and Mechanical Properties:255. |
| [11] | K Tillmann;W Jager.[J].Journal of Electron Microscopy,2000(02):245. |
| [12] | L Vescan.[J].Journal of Physics:Condensed Matter,2002:8235. |
| [13] | M A Grinfeld.[J].Soviet Mathematics Doklady:831. |
| [14] | D J Srolovitz.[J].Acta Materialia:621. |
| [15] | M.A.Grinfeld;D.J.Srolovitz;Kasper.Silicon Germanium EM1S Data Review Series No 12[M].INSPEC,The Institution of Electrical Engineers,London,1995:53. |
| [16] | M Volmer;A Weber.[J].Zeitschrift für Physikalische Chemie:277. |
| [17] | F C Frank;J H Van der Merwe .[J].Proceedings of the Royal Society A:Mathematical,Physical & Engineering Sciences,198:205. |
| [18] | A Hovsepian;D Cherns;W Jager.[J].Philosophical Magazine A:Physics of Condensed Matter:Structure,Defects and Mechanical Properties:1395. |
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