用磁控溅射方法制备纳米多晶钨膜,采用x射线衍射(XRD),扫描电子显微镜(SEM),弹性反冲探测(ERD)和慢正电子束分析(SPBA)等手段研究了在高能He+和H+依次对其辐照后He相关缺陷对H滞留的影响.结果表明,注He+钨膜在退火后从β型钨向α型钨转变;钨膜中的He含量随着退火温度的提高而减少,在873 K退火加剧钨膜中He原子的释放,且造成钨膜空位型缺陷的增加和结构无序度的提高;钨膜中的H滞留总量随着He滞留总量的减少略有下降.
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