溅射压强和退火气氛对Mg0.2Zn0.8O∶Al紫外透明导电薄膜结构与性能的影响

人工晶体学报, 2011, 40(6): 1526-1530.

溅射压强和退火气氛对Mg0.2Zn0.8O∶Al紫外透明导电薄膜结构与性能的影响

王华 ^1, , 燕红 ^2, , 许积文 ^3, , 江民红 ^4, , 杨玲 ^5,

1.桂林电子科技大学信息材料广西重点实验室,桂林541004

2.郑州铁路职业技术学院公共教学部,郑州450052

3.桂林电子科技大学信息材料广西重点实验室,桂林541004

4.桂林电子科技大学信息材料广西重点实验室,桂林541004

5.桂林电子科技大学信息材料广西重点实验室,桂林541004

基金项目: 广西科技基础条件平台建设专项(10-046-13) 广西信息材料重点实验室主任基金(0710908-05-Z)

关键词： Mg0.2Zn0.8O∶Al , 紫外透明导电薄膜 , 磁控溅射 , 溅射压强 , 退火气氛 , 光电性能

Effects of Sputtering Pressure and Annealing Atmosphere on Microstructure and Properties of Mg0.2Zn0.8O∶ Al UV-transparent Conducting Thin Films

以自制Mg0.2Zn0.8O∶Al陶瓷为靶材,采用室温溅射后续退火磁控溅射工艺制备了Mg0.2Zn0.8O∶Al紫外透明导电薄膜.研究了溅射压强和退火气氛对Mg0.2Zn0.8O∶Al薄膜结构和光电性能的影响.结果表明:溅射氩气压强不影响薄膜的相结构,但对薄膜的取向生长和结晶质量有一定影响；薄膜的方块电阻随溅射压强的增加先大幅减小后有所增大,溅射气压为2.0 Pa时,薄膜的方块电阻最低；不同溅射气压下制备薄膜的透光范围均已扩展到了紫外区域,而且具有85％以上的高透射率,但溅射气压对薄膜的带隙宽度和透光率没有明显影响；室温下溅射制备的薄膜经真空退火处理后其导电性能显著提高,但在空气中退火处理后其导电性能反而有所下降.

参考文献

[1]	Orita M;Hiramatsu H;Ohta H .Deep-UV Transparent β-Ga2 O3 Thin Films at Low Temperature[J].THIN SOLID FILMS,2002,411:134-139.
[2]	Koike K;Hama K;Nakashima I;Takada G;Ogata K;Sasa S;Inoue M;Yano M .Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications[J].Journal of Crystal Growth,2005(1/4):288-292.
[3]	黄凯,吕建国,刘先松,唐震.溶胶-凝胶法制备Mg掺杂ZnO薄膜的微结构与光学性质[J].人工晶体学报,2010(05):1171-1175.
[4]	Yang W.;Hullavarad SS.;Nagaraj B.;Takeuchi I.;Sharma RP.;Venkatesan T.;Vispute RD.;Shen H. .Compositionally-tuned epitaxial cubic MgxZn1-xO on Si(100) for deep ultraviolet photodetectors[J].Applied Physics Letters,2003(20):3424-3426.
[5]	S. Choopun;R. D. Vispute;W. Yang;R. P. Sharma;T. Venkatesan;H. Shen .Realization of band gap above 5.0 eV in metastable cubic-phase Mg_(x)Zn_(1-x)O alloy films[J].Applied physics letters,2002(9):1529-1531.
[6]	Minemoto T.;Nishiwaki S.;Takakura H.;Hamakawa Y.;Negami T. .Preparation of Zn1-xMgxO films by radio frequency magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1/2):173-176.
[7]	Cohen DJ;Ruthe KC;Barnett SA .Transparent conducting Zn1-xMgxO :(Al,In) thin films[J].Journal of Applied Physics,2004(1):459-467.
[8]	S. Cornelius;M. Vinnichenko;N. Shevchenko;A. Rogozin;A. Kolitsch;W. Moller .Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering[J].Applied physics letters,2009(4):042103-1-042103-3-0.
[9]	Burhan Bayraktaroglu;Kevin Leedy;Robert Bedford .High temperature stability of postgrowth annealed transparent and conductive ZnO:Al films[J].Applied physics letters,2008(2):022104-1-022104-3-0.
[10]	王华,黄竹,许积文,杨玲.Mg掺杂量和退火温度对MgxZn1-xO：Al紫外透明导电薄膜结构与性能的影响[J].人工晶体学报,2010(05):1206-1210.
[11]	Igasaki Y;Saito H .The Effects of Zinc Diffusion on the Electrical and Optical Properties of ZnO:Al Films Prepared by RF Reactive Sputtering[J].THIN SOLID FILMS,1991,199(02):223-230.
[12]	Zhang D H;Brodie D E .Effects of Annealing ZnO Films Prepared by Ion-beam-assisted Reactive Deposition[J].THIN SOLID FILMS,1994,238(01):95-100.

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