通过对异质外延GaN薄膜中各类结构缺陷进行系统的研究,发现材料内部的各种体、面和线缺陷,包括沉淀物、裂纹、反向边界、局部立方相、小角晶界和位错,都会对表面形貌产生影响,并具有对应的特征形貌.GaN薄膜中缺陷与表面形貌的这种对应关系,可以通过MOCVD生长机理和缺陷间相互作用机制加以解释,同时也提供了一种简单而有效的研究与检测GaN材料内部缺陷的方法.
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