在研究等离子聚合法所合成的聚对二甲苯(ppPX)薄膜的化学结构和性能的基础上,考察了ppPX作为铜在Si-SiLK基体上阻隔层的应用可能性.在特定辉光射频条件下,ppPX膜表面的苯环能够保留.加热退火后,铜向裸Si-SiLK和向经ppPX接枝修饰的Si-SiLK基体的扩散程度存在差异.经由Ar和N2载气所承载的对二甲苯单体所聚合得到的ppPX,具有不同的结构和性能,后者能改善铜和聚合物膜间的粘附力.因此,在Si-SiLK基底表面制备ppPX膜,可提高铜在基体上的粘附强度,又能阻隔铜向内基体内扩散.
参考文献
| [1] | K.Derbyshire,Fueling the productivity engine,Solid State Technol.,41(2),57(1998) |
| [2] | Semiconductor Industry Association,The National Technology Roadmap for Semiconductors,International SEMATECH,Austin,TX(1999) |
| [3] | D.H.Zhang,S.W.Loh,C.Y.Li,R.Liu,A.T.S.Wee,L.Zhang,Y.K.Lee,P.D.Foo,Study of Cu diffusion in Cu/TaN/SiO2/Si multilayer structures,Sur.Rev.Lett.,8(5),527(2001) |
| [4] | Y.K.Lee,K.Maung Latt,K.JaeHyung,T.Osipowicz,K.Lee,Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2,Mater.Sci.Eng.,B,68(2),99(1999) |
| [5] | S.Q.Wang,S.Suthar,C.Hoeflichm,B.J.Burrow,Diffusion barrier properties of TiW between Si and Cu,J.Appl.Phys.,73(5),2301(1993) |
| [6] | V.M.Dubin,Y.Shacham Diamand,B.Zhao,P.K.Vasudev,C.H.Ting,Selective and blanket electroless copper deposition for ultralarge scale integration,J.Electrochem.Soc.,144(3),898(1997) |
| [7] | Y.Okinaka,T.Osaka,In:H.Gerischer,C.W.Tobias,Editors,Advances in Electrochemical Science and Engineering,Vol.3,VCH,Weinheim,55(1994) |
| [8] | Y.Y.Cheng,J.Y.Kan,I.S.Lin,Adhesion studies of low-k silsesquioxane.Thin Solid Films,462-463,297(2004) |
| [9] | T.K.Goh,T.K.S.Wong,Investigation of structure,thermal and oxygen plasma stability of mesoporous methylsilsesquioxane films by X-ray reflectivity and small angle scattering.Microelectron.Eng.,75(3),33(2004) |
| [10] | M.Morgen,E.T.Ryan,J.H.Zhao,C.Hu,T.Cho,P.S.Ho,Low dielectric constant materials for ULSI interconnects,Annu.Rev.Mater.Sci.,30,645(2000) |
| [11] | P.Springer,Tantalum,copper and damascene:The future of interconnects,Semicond.Int.,21(6),90(1998) |
| [12] | C.Feger,H.Franke,Polyimides in High-Performance Electronics Packaging and Optoelectronic Applications.In:M.K.Ghosh,K.L.Mittal,Editors,Polyimides:fundamentals and applications,(Marcel Dekker,Inc,New York,1996) p.759 |
| [13] | N.Aoi,Novel porous films having low dielectric constants synthesized by liquid phase silylation of spin-on glass sol for intermetal dielectrics,Jpn.J.Appl.Phys.,Part 1,36,1355(1997) |
| [14] | K.L.Fang,B.Y.Tsui,Metal drift induced electrical instability of porous low dielectric constant film,J.Appl.Phys.,93(9),5546(2003) |
| [15] | P.H.Towusend,S.J.Martin,J.Godschalx,D.R.Romer,D.W.Smith,Jr.,D.Castillo,R.DeVries,G.Buske,N.Rondan,S.Froelicher,J.Marshall,E.O.Shaffer,J.H.Im,Materials Research Society symposia proceedings,Mater.Res.Soc.Syrup.Proc.,476,9(1997) |
| [16] | D.A.Babb,D.W.Smith,Jr.,S.J.Martin,J.P.Godschalx (Inventors),World Patent WO 97/10193,The Dow Chemical Company(1997) |
| [17] | S.J.Martin,J.P.Godschalx,M.E.Mills,E.O.Shaffer,P.H.Townsend,Development of a low-dielectric-constant polymer for the fabrication of integrated circuit interconnect,Adv.Mater.,12,1769(2000) |
| [18] | S.Saravananl,C.J.Mathail,S.Venkatachalam,M.R.Anantharaman,Low k thin films based on rf plasma-polymerized aniline,New Journal of Physics,6,64(2004) |
| [19] | R.Frch,Z.H.Zhang,W.Knoll,Soft Plasma Treated Surfaces:tailoring of structure and properties for biomaterial applications,Plasma Process.Polym.,2(5),351(2005) |
| [20] | G.J.Kovacs,P.S.Vincett,Formation and thermodynamic stability of a novel class of useful materials:Close-packed monolayers of submicron monodisperse spheres just below a polymer surface,J.Colloid Interface Sci.,90(2),335(1982) |
| [21] | J.G.Wang,K.G.Neoh,K.T.Kang,Comparative study of chemically synthesized and plasma polymerized pyrrole and thiophene thin films,Thin Solid Films,446(2),205(2004) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%