本文采用二步法制备Cu2ZnSnS4(CZTS)薄膜,首先通过真空热蒸发制备CuZnSn (CZT)预制层,其衬底加热温度分别为20℃、50℃、75℃和100℃,然后对所制备的CZT预制层在400℃下硫化60 min,从而制备出CZTS薄膜.利用XRD、Raman、SEM、反射谱和透射谱对所制备的CZTS薄膜进行了表征,实验结果表明,预制层衬底加热温度对CZTS薄膜结构与光学特性有很大影响,在衬底加热50℃时制备预制层硫化后所得CZTS薄膜具有高的结晶度、致密均匀的薄膜表面和最佳1.5 eV光学带隙.此外,与衬底未加热制备预制层在500℃和90 min最佳硫化条件下所制备的高纯CZTS薄膜相比,在50℃预制层衬底加热条件下所制备CZTS薄膜具有更好地结晶质量、更低的硫化温度和更短的硫化时间,这种现象表明衬底加热制备金属预制层利于更高品质CZTS薄膜的制备,可有效的降低硫化温度和缩短硫化时间,当前的研究结果为在低温下实现高质量CZTS薄膜的制备提供了一种有效的途径.
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