通过对Ag元素掺杂的赝两元合金(PbTe)1-x(SnTe)x(0≤x≤0.4)热电性能进行研究发现,处于本征态的PbTe合金电导率对掺杂较为敏感.但当摩尔分数增大时,赝两元合金(PbTe)1-x(SnTe)x电导率随掺杂量的增大受到抑制,这在高温情况下尤为显著.当温度低于约423K时,掺杂量对PbTe合金的Seebeck系数影响不大;但当温度大于423K时,PbTe合金的Seebeck系数随掺杂量而增大.掺杂量越大,摩尔分数越高,同一合金的Seebeck系数变化越小.热电优值计算表明,掺杂0.02mol%的合金系较适宜于制作成分递变的热电材料(FGM).
参考文献
[1] | Rogacheva E;Dzyubenko N.The Improvement of Thermoelectric Properties of Heterophase Alloys Based on Tin Telluride[A].Cardiff, United Kingdom: IEEE,1999:226. |
[2] | Orihashi M.;Chen LD.;Goto T.;Hirai T.;Noda Y. .Effect of tin content on thermoelectric properties of p-type lead tin telluride[J].The journal of physics and chemistry of solids,2000(6):919-923. |
[3] | Harman T C .[J].Journal Nonmetals,1973,1:183. |
[4] | Das V D;Bahulayan C .[J].Japanese Journal of Applied Physics,1995,34:534. |
[5] | Das V D.Thermoelectric Power and Figure of Merit of Pb-Sn-Te Alloy Thin Films[A].Dresden, Germany: IEEE,1997:259. |
[6] | Masaki Orihashi;Yasutoshi Noda;Hiromasa T. Kaibe;Isao A. Nishida .Evaluation of thermoelectric properties of impurity-doped PbTe[J].Materials transactions,1998(6):672-678. |
[7] | Noda Y;Orihashi M;Nishida I A .Thermoelectric Properties of P-type Lead Telluride Doped with Silver or Potassium[J].Materials Transactions,1998,39(05):602. |
[8] | Allgaier R S;Scanlon W W .Mobility of Electron and Holes in PbS PbSe, and PbTe Between Room Temperature and 4.2K[J].Physical Review,1958,111(04):1029. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%