通过向TiO2粉体中加入质量分数为1％～15％的Ga2O3粉末,制备了Ga掺杂的TiO2陶瓷靶,并采用脉冲激光沉积法(PLD)用陶瓷靶制备出TiO2薄膜,将薄膜于800～1000℃下退火.对薄膜结构和光学性质的研究表明1000℃退火条件下浓度为1％ Ga2O3掺杂能有效将金红石相TiO2的禁带宽度减小至2.62 eV,使其吸收边红移动至470 nm.
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