利用分子束外延方法(MBE)在GaAs (001)衬底上外延生长了GaSb薄膜,并对GaSb薄膜进行了高温退火研究,利用高分辨透射电子显微镜(HRTEM)、原子力显微镜(AFM)、Hall效应(Hall Effect)和低温光荧光谱(LTPL)等手段对薄膜的晶体质量、电学性质和光学性质进行了研究.发现直接生长的GaSb膜表面平整,空穴迁移率较高.研究发现30 s、650℃的快速热退火可消除位错等缺陷,显著提高GaSb薄膜的光学质量.
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