用分子束外延在GaAs衬底上生长了CdTe/Cd0.8Mn0.2Te多量子阱结构.利用X射线衍射(XRD)、低激发密度下的PL光谱和变密度激发的ps时间分辨光谱研究了CdTe/CdMnTe多量子阱的结构和激子复合特性.在变密度激发的ps时间分辨光谱中,发现不同激发密度下发光衰减时间不同,认为它的机理可能是无辐射复合引起的.
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