本文主要研究了不同剂量C+离子预先注入Si08Ge0.2衬底后,对Ni和Si0.8Ge0.2反应的影响.研究结果充分表明:C+离子注入的Si08Ge02衬底,降低了Ni和Si0.8Ge0.2反应的速度,提高了NiSi08Ge0.2的热稳定性.此外,我们发现C原子分布在NiSi0.8Ge02/Si0.8Ge0.2的界面,大幅度降低了Ni-Si0.8 Ge0.2表面和NiSi0.8 Ge0.2/Si0.8Ge0.2界面的粗糙度,高剂量C+注入的样品效果更为明显.
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