用电子束蒸发的方法在单晶硅(100)基片上制备了硼碳氮薄膜,通过椭圆偏振仪、X射线衍射仪(XRD)、X光电子能谱仪(XPS)、傅立叶红外光谱仪(FTIR),测试分析了薄膜厚度均匀性、成分与结构.结果表明,薄膜均匀性较好,薄膜的沉积速率非常慢;薄膜在衬底温度为常温下沉积已是晶态的,随着衬底温度升高到450 ℃,其结晶性逐渐增强;薄膜不是石墨与BN的混和膜而是C、B、N相互结合成键.
In this paper, Boron carbon nitride thin films were deposited on Si (100) substrates using electron beam evaporation technology. The thickness was ascertained by Ellipsometer; meantime the films samples were characterized by X-ray diffraction(XRD)、Fourier-transformed infrared spectroscopy and X-ray photon electron spectroscopy(XPS). The result of Ellipsometer shows that the films are even and the deposition rate is slow. The results of X-ray diffraction show the film are crystal state. At the same time the results of X-ray photon electron spectroscopy (XPS) and Fourier-transformed infrared spectroscopy show the films are atomic-level hybrids composed of B, C and N atoms.
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