研究了Ga2O3/Al2O3膜氨化反应自集结制备GaN薄膜的光致发光特性,讨论了发光机制以及生长条件对其光致发光特性的影响.样品的荧光光谱在347 nm有一强发光峰,在412 nm有一弱发光峰,这两个峰的强度都随着氨化温度的升高和氨化时间的增长而增强,但峰的位置保持不变.我们认为347 nm的峰是GaN的带边发光峰由于薄膜中晶粒尺寸的减小而蓝移造成的,而412 nm的发光峰则来源于导带到杂质受主能级的辐射复合.
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