采用电弧熔炼、快速球磨结合放电等离子烧结快速制备了单相Si80Ge20Bx(x=0.5、1、1.5、2)热电材料,对烧结后试样进行了物相结构分析和热电性能表征.结果表明,B的引入导致样品载流子浓度增加,电导率随着B掺量增加而大幅增加,而Seebeck系数反之下降.B的固溶增加试样中点缺陷浓度而导致声子散射增加,热导率下降明显.当x=1时,样品在1000K获得最大ZT值0.78.
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