利用直流磁控反应溅射法在不同氧分压下制备了SbOx薄膜，对退火前后薄膜的X射线衍射(XRD)分析表明，退火后薄膜结构发生了从非晶态向晶态的转变。利用示差扫描量热法(DSC)测出不同升温速度条件下非晶态薄膜粉末的晶化峰温度，用Kissinger公式计算了材料的结晶活化能。计算结果表明，随着溅射时氧分压的增加，薄膜的结晶活化能增加，而相应的非晶态与晶态之间的焓差则呈现出相反的变化趋势。
Non-stoichiometric SbOx thin films were prepared by the method of reactive DC magnetron sputtering under different oxygen partial pressureS. X-ray diffraction (XRD) spectra of the as-deposited and annealed films showed that the films changed from amorphous to crystalline states due to the heat-treatment. The peak temperatures of crystallization at different heating rates were determined by using DSC (Differential Scanning Calorimeter) analysis. Based on the Kissinger formula, the crystallization activation energies of these amorphous films were calculated. The results showed that the activation energy increased with the increase of oxygen partial pressure, while the enthalpy difference between the as-deposited and the crystalline states decreased.
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