对电子芯片在FC-72工质中浸没喷射沸腾换热进行了实验研究.通过干腐蚀技术在硅片表面加工出交错排列的柱状微结构(30 μm×60 μm,50 μm×60μm,50 μm×120 μm,30 μm×120 μm,宽×高),硅片尺寸为10 mm×10mm×0.5 mm,过冷度为35 K,喷射速度Vj分别为0.5,1,1.5 m/s.喷嘴数目分别为1,4和9,直径分别为3,1.5和1mm.喷嘴出口到芯片表面的距离分别为3,6和9 mm.实验表明,交错排列柱状微结构的换热效果要好于光滑芯片,临界热流密度随着喷射速度的增加而增加.在雷诺数及其他工况相同的情况下,不同喷嘴数目对换热的影响不同,当n=4时,所有芯片的壁面温度最低,临界热流密度最高,其次是n=9,换热效果最差的是n=1.在雷诺数及其他工况相同的情况下,所有芯片的换热性能在喷射距离s=3 mm时最好,其壁温最低,临界热流密度最高,随着喷射距离的增加,其壁面温度逐渐升高,临界热流密度逐渐减小.
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