对均匀二元合金的表面进行机械清洁处理,得到元素深度分布为已知的试样,并对这样的试样做了离子剥离逐层分析.试验结果表明,Auger-离子剥离逐层分析得到的元素分布不能精确地反映元素的真实分布.除因选择性剥离造成的稳定态浓度偏离体浓度外,有时还在近表面处出现一个元素“贫乏层”(或富集层).本文也对引起逐层分析曲线“失真”的原因及用这种方法做逐层分析时应注意的问题做了简单说明.
The element distribution of the homogeneous binary samples withmechanicaly scraped surfaces have been studied by means of Auger-Ion sputteringtechnique. The resulted profiling curves, generally show that the steady state con-centration usualy deviates more or less from the bulk concentration and that anobservable "spike" appears in the near surface layer. The amplitude of the divia-tion or the "spike" depends on the system and sputtering condition. Therefore, theAuger-Ion sputtering profiling curve could not reflect the original element distribu-tion exactly due to the interaction between energetic ions and atoms on the samplesurface. Some effects leading to the "distortion" and some aspects which must betaken in to account in using the profiling curve have been discussed briefly.
参考文献
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| [3] |
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