通过离子注入技术对单晶硅表面进行氩离子注入处理,利用纳米压痕仪及其附件研究了单晶硅表面在离子注入前,后的微观力学性能和变形机理,并用透射电子显微镜研究了改性层的微观结构.研究结果表明:一定剂量的氩离子注入使单晶硅表面的断裂韧性得到改善, 提高了其在纳米划痕过程中的失效负荷.原因是氩离子的注入使单晶硅表面形成了硅的微晶态与非晶态共存的混合态结构的改性层,改善了单晶硅的微观力学性能.
The nano-scratch behaviors of Ar+ implanted single-crystal silicon were investigated by a nano indenter system, the micro-structure of the implanted layer was analyzed with TEM. The results show that Ar+ implantation of single-crystal silicon increases the critical load, the best dose is 1×1016ions/cm2. The mixed structure of micro-crystal and amorphous silicon is formed on the surface of Ar+ implanted single-crystal silicon. This contributes to increasing the ability of plastic deformation and to increasing the fracture toughness of single-crystal silicon.
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