欢迎登录材料期刊网

材料期刊网

高级检索

研究了多孔硅层孔隙率对其热绝缘性能的影响机制.以P+型硅片为基底,通过双槽电化学腐蚀法制备多孔硅.采用微拉曼光谱法对多孔硅的热导系数进行了测量,结果表明,多孔硅的热导系数随其孔隙率的增大而明显下降,实验中热导系数最低可达到0.624W/(m·K),从而通过降低热导系数使多孔硅的绝热性能得到了增强.

参考文献

[1] Canham L T .Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J].Applied Physics Letters,1990,57(10):1046.
[2] Canham LT.;Loni A.;Simons AJ.;Cox TI. .PROGRESS TOWARDS SILICON OPTOELECTRONICS USING POROUS SILICON TECHNOLOGY[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1996(0):436-441.
[3] Hedrich F.;Lang W.;Billat S. .Structuring of membrane sensors using sacrificial porous silicon[J].Sensors and Actuators, A. Physical,2000(3):315-323.
[4] W. Kronast;B. Mueller;W. Siedel .Single-chip condenser microphone using porous silicon as sacrificial layer for the air gap[J].Sensors and Actuators, A. Physical,2001(3):188-193.
[5] Irajizad A;Rahimi F;Chavoshi M et al.Characteration of porous poly-silicon as a gas sensor[J].Sensors and Actuators B:Chemical,2004,100:341.
[6] Gesele G.;Drach V.;Fricke J.;Arensfischer R.;Linsmeier J. .TEMPERATURE-DEPENDENT THERMAL CONDUCTIVITY OF POROUS SILICON[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,1997(21):2911-2916.
[7] Kresge C T;Leonowicz M E;Roth W J et al.Ordered mesoporous molecular sieves synthesized by a liquid-crystal template mechanism[J].Nature,1992,359:710.
[8] Chen G .Nonlocal and nonequilibrim heat conduction in the vicinity of nanopartides[J].Heat Transfer,1996,118(33):539.
[9] Majum A .Microscale heat conduction in dielectric thin films[J].Heat Transfer,1993,115(01):7.
[10] Perichon S;Lysenko V;Roussel Ph et al.Technology and micro-Raman characterization of chick meso-porous silicon layers for thermal effect microsystems[J].Sensors and Actuators,2000,85:235.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%