采用电子束熔炼工艺提纯了冶金级硅材料.硅中重要杂质元素Al在制备铸锭中的分市小均匀,呈现出由底部到顶部、由边缘到中心的富集趋势.铸锭边缘部位的杂质Al含埴最低,已经低于ICP-AES的探测极限(1×10-5%).对杂质Al的挥发去除过程进行了理论分析.由Langmuir方程和Henry定律导出了杂质Al的去除率与熔体表面温度、熔炼时间的关系式,该关系式表明杂质Al的去除率会随着熔体表面温度升高、熔炼时间延长而增加,其理论计算值与实测结果符合的较好.
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