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以Si为衬底,SiO2+Ge为复合靶,用超晶格方法(SiO2+Ge层和SiO2 + GeO2层交替生长)和磁控溅射技术制备镶嵌于Si/Ge氧化膜中的多层Ge纳米晶.X射线衍射(XRD)结果表明:退火样品中有Ge纳米晶生成.Ge纳米晶的声子限域效应引起Raman散射谱的Ge-Ge振动峰向低频移动.X射线光电子能谱(XPS)分析表明Ge主要以Ge0和Ge4+形式分别存在于所制备的超晶格中的SiO2+Ge层和SiO2+GeO2层中.透射电子显微镜(TEM)研究表明,Ge纳米晶被限制在SiO2+Ge层中且结晶性好.实验结果说明,相比于通常的单层介质膜方法,用该超晶格方法极大地提高了Ge纳米晶的密度,尺寸和空间分布的均匀性.

参考文献

[1] ROBERT J.WALTERS;GEORGE I.BOURIANOFF;HARRY A.ATWATER .Field-effect electroluminescence in silicon nanocrystals[J].Nature materials,2005(2):143-146.
[2] Conibeer G;Green M;Corkish R;Cho Y;Cho EC;Jiang CW;Fangsuwannarak T;Pink E;Huang YD;Puzzer T .Silicon nanostructures for third generation photovoltaic solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(0):654-662.
[3] W. K. Choi;W. K. Chim;C. L. Heng;L. W. Teo;Vincent Ho;V. Ng;D. A. Antoniadis;E. A. Fitzgerald .Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure[J].Applied physics letters,2002(11):2014-2016.
[4] Maeda Y;Tsukamoto N;Yazawa Y et al.Visible Photoluminescence of Ge Microcrystals Embedded in SiO2 Glassy Matrices[J].Applied Physics Letters,1991,59:3168-3170.
[5] Cullis AG.;Calcott PDJ.;Canham LT. .THE STRUCTURAL AND LUMINESCENCE PROPERTIES OF POROUS SILICON [Review][J].Journal of Applied Physics,1997(3):909-965.
[6] Choi W K;Chew H G;Zheng F et al.Stress Development of Germanium Nanocrystals in Silicon Oxide Matrix[J].Applied Physics Letters,2006,89:113126-113128.
[7] Cracium V;Leborgne C B;Nicholls E J et al.Light Emission from Germanium Nanoparticles Formed by Ultraviolet Assisted Oxidation of Silicon-germanium[J].Applied Physics Letters,2006,69:1506-1508.
[8] Mestanza S N M;Rodriguez E;Frateschi N C .The Effect of Ge Implantation does on the Optical Properties of Ge Nanocrystals in SiO2[J].Nanotechnology,2006,18:4548-4553.
[9] Basa P;Molnár G;Dobos L et al.Formation of Ge Nanocrystals in SiO2 by Electron Beam Evaporation[J].Journal of Nanoscience and Nanotechnology,2008,8:818-822.
[10] S. Foss;T.G. Finstad;A. Dana;A. Aydinli .Growth of Ge nanoparticles on SiO2/Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(16):6381-6384.
[11] Sasaki Y;Horie C .Resonant Raman Study of Phonon States in Gas-evaporated Ge Small Particles[J].Physical Review B,1993,47:3811-3818.
[12] Santos D R dos;Torriani I L .Crystallite Size Determination in μc-Ge Films by X-ray Diffraction and Raman Line Profile Analysis[J].Solid State Communications,1993,85:307-310.
[13] Richter H;Wang Z P;Ley L .The one Phonon Raman Spectrum in Microcrystalline Silicon[J].Solid State Communications,1981,39:625-629.
[14] Zi J.;Xie XD.;Zhang KM. .COMPARISON OF MODELS FOR RAMAN SPECTRA OF SI NANOCRYSTALS[J].Physical Review.B.Condensed Matter,1997(15):9263-9266.
[15] Schmeisser D;Schnell R D;Bogen A et al.Surface Oxidation States of Germanium[J].Surface Science,1986,172:455-465.
[16] Rolo A G;Conde O;Gomes M J M et al.Structural,Chemical and Optical Characterization of Ge-doped SiO2 Glass Films Grown by Magnetron Rf-Sputtering[J].Journal of Materials Processing Technology,1999,92/93:269-273.
[17] M. Zacharias;J. Heitmann;R. Scholz;U. Kahler;M. Schmidt;J. Blasing .Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO_(2) superlattice approach[J].Applied physics letters,2002(4):661-663.
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