利用碲溶剂法生长Zn1-xCrxTe晶体晶锭,用红外透过显微镜及扫描电子显微镜观察了晶锭不同位置富碲相的分布与形态.结果表明:晶锭的外围存在一层富碲相,Zn1-xCrx Te晶体的中部碲夹杂相较少,碲在晶界处易富集;红外透过显微成像所显示的晶粒内部的较大碲夹杂相呈六边形,而晶界处的碲夹杂相形状不规则.
参考文献
[1] | Furdyna J K .Diluted Magnetic semiconductors[J].Journal of Applied Physics,1988,64(04):29-64. |
[2] | Saito H;Zayets V;Yamagata S et al.Room-temperature Ferromagnetism in a Ⅱ-Ⅵ Diluted Magnetic Semiconductor Zn1-x Crx Te[J].Physical Review Letters,2003,90(20):207202. |
[3] | Munekata H;Ohno H;Ruf R R et al.P-Type Diluted Magnetic Ⅲ-Ⅴ Semiconductor[J].Journal of Crystal Growth,1991,111(1-4):1011-1015. |
[4] | Ohno H;Munekata H;Von Mnlnar S et al.New Ⅲ-Ⅴ Diluted Magnetic Semicondnctors[J].Journal of Applied Physics,1991,69(08):6103-6108. |
[5] | Ohno H;ShenA;Matsukura F et al.(Ga,Mn)As:Anew Diluted Magnetic Semiconductor Based on GaAs[J].Applied Physics Letters,1996,69(03):363-365. |
[6] | 栾丽君,介万奇.稀磁半导体Hg0.89Mn0.11Te中的磁化率和自旋-玻璃转变[J].人工晶体学报,2009(02):402-406. |
[7] | Sato K.;Katayama-Yoshida H. .First principles materials design for semiconductor spintronics[J].Semiconductor Science and Technology,2002(4):367-376. |
[8] | H. Ohno .Making Nonmagnetic Semiconductors Ferromagnetic[J].Science,1998(5379):951-956. |
[9] | Ozaki N;Nishizawa N;Nam K T et al.Magnetic Properties of Undoped and N-doped Zn1-xCrx Te Grown by MBE[J].American Institute of Physics,2005,772(01):345-346. |
[10] | P. Fochuk;O. Panchuk;P. Feychuk;L. Shcherbak;A. Savitskyi;O. Parfenyuk;M. Ilashchuk;M. Hage-Ali;P. Siffert .Indium dopant behaviour in CdTe single crystals[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2001(1/2):104-112. |
[11] | Shen J;Aidum D K;Regel L et al.Etch Pits Originating from Precipitates in CdTe and Cd1-xZnx Te Grown by Vertical Bridgman-Stockbarger Method[J].Journal of Crystal Growth,1993,132:250-260. |
[12] | Feutelais Y;Haloui A;Legendre B .A Thermodynamic Evaluation of the Te-Zn System[J].Journal of Phase Equilibria,1997,18(01):48-61. |
[13] | Vallin J T;Slack G A;Roberts S et al.Infrared Absorption in Some Ⅱ-Ⅵ Compounds Doped with Cr[J].Physical Review B,1970,2(11):4313-4333. |
[14] | Rudolph P .Fundamental Studies on Bridgman Growth of CdTe[J].Progress in Crystal Growth and Characterization of Materials,1994,29:275-381. |
[15] | 徐亚东,介万奇,王涛,俞鹏飞,杜园园,何亦辉.CdZnTe晶体中微米级富Te相与PL谱的对应关系[J].无机材料学报,2011(04):359-363. |
[16] | Schwarz R;Benz K W .Thermal Field Influence on the Formation of Te Inclusions in CdTe Grown hy the Travelling Heater Method[J].Journal of Crystal Growth,1994,144(3-4):150-156. |
[17] | Shen J;Aidun D K;Regel L et al.Characterization of Precipitates in CdTe and Cd1-xZnxTe Grown by Vertical Bridgman-Stockbarger Technique[J].Journal of Crystal Growth,1993,132(1-2):250-260. |
[18] | 介万奇.晶体生长原理与技术[M].北京:科学出版社,2010:616. |
[19] | Brion H G;Mewes C;Hahn I et al.Infrared Contrast of Inclusions in CdTe[J].Journal of Crystal Growth,1993,134:281-286. |
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