用等离子冷放电化学气相法（PCVD）合成的高纯、超细的无定形Si3N4粉末，储放了不同时间和在红外灯下烘烤短时间后，进行红外光谱的测定．发现合成的粉末刚暴露于空气中就产生了氧化，而后随着储放时问的延长，表面氧化愈来愈严重，Si－O键的吸收峰强度明显增强，而Si－N－Si键，Si-H键的吸收峰则愈来愈弱，直至仅有极小的吸收．而用低温PCVD法合成的无定形薄膜的特征吸收峰宽且强，与刚合成的粉末的红外谱有许多相同之处，但峰的形状，强度不随时间的变化而变化．
High pure ultrafinc Si3N4 powders were obtAlNed by Plasma Cold-discharge Chemical VaporDeposition Method. After storage for various time and baking with infrared lamp, IR spectra ofthe powders were measured. IR spectra revealed that oxidation occurred as soon as the powderexposed to the air. With the continuation of the storage, the oxidation on the surface developedand the adsorption peak of Si-O bond obviously increased while the adsorption peaks of So-N-Siand Si-H bonds decreased. The characteristic adsorptions of PCVD synthesized amorphous films were wide and strong, similar to those of the fresh synthesized powder. Howere they did not change with time.
参考文献
| [1] |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%