采用光加热悬浮区熔法制备了(Mo_(0.85) Nb_(0.15))Si_2单晶体,研究了化学成分和生长速度对获得C40结构单晶体的影响.结果表明:采用此法可制备出表面无裂纹的(Mo_(0.85) Nb_(0.15))Si_2单晶体,其尺寸可达φ8 mm×90 mm,晶体的生长面接近(0001)面,生长形态符合布拉维法则、周期键链(PBC)理论和小面生长理论.
(Mo_(0.85) Nb_(0.15))Si_2 single crystals were prepared by using photothermal heating floating-zone melting method. The effects of chemical composition and growth speed on getting the C40 single crystal werestudied. The results show that the crack-free (Mo_(0.85) Nb_(0.15))Si_2 single crystals with 8 rnm in diameter and 90 mm in length were prepared using the method. The surface of crystal growth was close to the (0001) plane. The growth morphology accorded with Bravairs law, PBC theory and facet growth theory.
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