在Si(111)衬底上,采用SiH4-C3H8-H2气体反应体系,通过低压化学气相沉积(LPCVD)工艺外延出结晶质量良好的SiC薄膜.低温光致发光谱表明该薄膜属于6H-SiC多型体.X射线衍射图表明该薄膜具有高度的择优取向性.扫描电子显微镜图表明该薄膜由片状SiC晶粒组成.拉曼光谱和透射电子衍射谱的结果进一步表明该薄膜具有较高的结晶质量.对Si(111)衬底上6H-SiC薄膜的生长机制进行了初步探讨.
参考文献
| [1] | 李娟,陈秀芳,马德营,姜守振,李现祥,王丽,董捷,胡小波,徐现刚,王继扬,蒋民华.SiC单晶片的超精密加工[J].功能材料,2006(01):70-72. |
| [2] | Hernández M J;Ferro G;Chassagne T et al.[J].Journal of Crystal Growth,2003,253(1-4):95-101. |
| [3] | Choi D;Shinavski R J;Steffier W S et al.[J].Journal of Applied Physics,2005,97:074904-074912. |
| [4] | 孙国胜,王雷,罗木昌,赵万顺,孙殿照,曾一平,李晋闽,林兰英.Si（100）衬底上高质量3C-SiC的改良外延生长[J].半导体学报,2002(08):800-804. |
| [5] | Matsutani T;Kiuchi M;Takeuchi T et al.[J].Vacuum,2000,59(01):152-158. |
| [6] | W.L. Zhu;J.L. Zhu;S. Nishino;G. Pezzotti .Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(6):2346-2354. |
| [7] | 朱俊杰,林碧霞,姚然,赵国亮,傅竹西.ZnO/SiC/Si（111）异质外延[J].半导体学报,2004(12):1662-1665. |
| [8] | 苏剑峰,郑海务,林碧霞,朱俊杰,傅竹西.硅衬底碳化对异质外延SiC薄膜结构的影响[J].材料研究学报,2006(03):231-234. |
| [9] | Reitano R;Foti G;Pirri C F et al.[J].Materials Science and Engineering C:Biomimetic and Supramolecular Systems,2001,15(1-2):299-302. |
| [10] | Zheng Haiwu;Fu Zhuxi;Lin B X et al.[J].Journal of Alloys and Compounds,2006,426(1-2):290-294. |
| [11] | Jeong J K;Um M Y;Na H J et al.[J].Materials Science Forum,2002,389-393:267-270. |
| [12] | Haiwu ZHENG,Junjie ZHU,Zhuxi FU,Bixia LIN,Xiaoguang Li.Heteroepitaxial Growth and Characterization of 3C-SiC Films on Si Substrates Using LPVCVD[J].材料科学技术学报（英文版）,2005(04):536-540. |
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