以电化学方法制备了多孔硅材料并通过表面轮廓测试仪、原子力显微镜、显微拉曼光谱仪等设备对制备多孔硅的孔隙率、厚度、表面形貌、以及热导率进行了表征.结果发现,本实验制备的多孔硅属于介孔硅(15～20nm),其孔隙率随腐蚀时间和腐蚀电流的变化有先增大后减小的趋势.增加多孔硅的厚度和孔隙率,可以使得多孔硅的热导率显著降低(最低可低至0.62W/m·K).
参考文献
| [1] | Canham L T .[J].Applied Physics Letters,1990,557:1046-1048. |
| [2] | Kronast W;Müller B;Siedel W et al.[J].Sensors and Actuators A-Physical,2001,A87(03):188-193. |
| [3] | Dücso Cs;Vázsonyi E;Adám M et al.[J].Sensors and Actuators A-Physical,1997,A60(1-3):235-239. |
| [4] | Steiner P.;Lang W. .MICROMACHINING APPLICATIONS OF POROUS SILICON[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1995(1/2):52-58. |
| [5] | Lysenko V.;Perichon S.;Remaki B.;Barbier D. .Thermal isolation in microsystems with porous silicon[J].Sensors and Actuators, A. Physical,2002(1/2):13-24. |
| [6] | Gesele G;Linsmeier J;Drach V et al.[J].Journal of Applied Physiology,1997,20:2911-2916. |
| [7] | Monticone E.;Lerondel G.;Steni R.;Amato G.;Lacquaniti V.;Boarino L. .Properties of metal bolometers fabricated on porous silicon[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1999(1):267-271. |
| [8] | Perichon S;Lysenko V;Remaki B .[J].Journal of Applied Physics,1999,86:4700. |
| [9] | Billat S.;Arensfischer R.;Berger MG.;Kruger M.;Luth H.;Thonissen M. .INFLUENCE OF ETCH STOPS ON THE MICROSTRUCTURE OF POROUS SILICON LAYERS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):22-25. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%