CdTe量子点生长速率的参数研究

人工晶体学报, 2014, 43(8): 1981-1985.

CdTe量子点生长速率的参数研究

姜青松 ^1, , 朱月华 ^2, , 邢海东 ^3, , 施丰华 ^4, , 卓宁泽 ^5, , 王海波 ^6,

1.南京工业大学材料科学与工程学院,南京210009

2.南京工业大学电光源材料研究所,南京210015

3.南京工业大学电光源材料研究所,南京210015

4.南京工业大学电光源材料研究所,南京210015

5.南京工业大学材料科学与工程学院,南京210009

6.南京工业大学电光源材料研究所,南京210015

基金项目: 江苏高校优势学科建设工程(PAPD) 2013年科技部科研院所专项(2013EG111218) 国家高技术研究发展计划(863计划)(2011AA03A107) 江苏省科技支撑计划(BE2012005)

关键词：碲化镉量子点 , 生长速率 , 量子效率

Study on Growth Rate Parameters of CdTe Quantum Dots

Keywords： CdTe quantum dots , growth rate , quantum efficiency

以NaTeO3为碲源,还原型谷胱甘肽(GSH)为稳定剂,一步合成CdTe量子点.研究了参与反应回流的镉与碲摩尔比和Cd2+浓度对CdTe量子点生长速率的影响,并用荧光光谱、X射线衍射光谱及透射电子显微镜对其性能进行表征.结果表明:GSH稳定的CdTe量子点具有闪锌矿结构、球形形貌;在pH =8.5,n(Cd2+)∶ n(GSH)=1∶1.2,C(Cd2)=0.67 mmol/L,n(Cd)∶ n(Te)=6∶1时,CdTe量子点荧光量子效率最高可达51.53％,并且量子点生长的速率在初期的1h内达到最高点,并随着时间的延长呈下降趋势.

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