采用射频溅射制备Ba0.8Sr0.2TiO3(BST)薄膜,研究了测试温度(295～375K)对BST薄膜J-V(电流密度-电压)特性的影响.实验发现:J∝Vm在低场下(V＜1.8V)m≈1,高场下(V＞1.8V)m≈8.随着测试温度升高,在低场下电流密度增大,指数m值保持不变;而在高场下电流密度减小,指数m值减小.通过进一步分析发现:电流密度和温度的关系在低场下满足lnJ∝-1T,在高场下满足logJ∝1t.
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