Nanocrystalline Fe-Cu-Si-B alloys, with grain sizes of 30-90 nm, were prepared by crystallization of the parent amorphous alloy. Electrical resistivity of 30 nm-grained Fe-Cu-Si-B samples measured at room temperature was found to be higher than that of the amorphous material. With increasing grain size, the resistivity declines rapidly, which is in good agreement with the theoretical analysis based on the electron scattering of interfaces.
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