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先用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用不同能量的C离子对薄膜进行注入,然后用荧光光谱分析了注入参数（注入能量、剂量）与发光特性改变的关联。研究发现,C离子注入能显著影响薄膜的发光特性,并且薄膜发光特性的改变强烈依赖于C离子的注入能量和注入剂量。对C离子注入SiO2薄膜引起发光特性改变的可能机理进行了简单讨论。

Amorphous SiO2 thin films of about 0.5-1μm in thickness were thermally grown on single crystalline silicon. These samples were implanted at room temperature （RT） with C ions of 60,80,100 or 120keV to doses ranging from 1.0 ×10^17 to 1.2 × 10^18 ions/cm2. The variation of photoluminescence （PL） properties of these samples was investigated at RT using a fluorescent spectroscopy. The obtained results showed that C-ion im- plantation led to significant changes of the PL properties and the variation of the PL properties depend strongly on the energy and doses of the C-ion implantations. For examples, huge PL peaks located at about 2.63, 2.99 and 3.39eV can be seen in PL spectra of sample with 120keV C ions implanted to 1.0× 10^17ions/cm2. This may imply that some micro-structures like Si-Si defects were induced in a-SiO2 films after C-ion implantations. It seems that special light emitters can be produced by using proper ion energy and implantation doses, which is a very useful way for synthesis of new type of SiO2-based light-emission materials.