在类石墨烯结构的Bi2Se3拓扑绝缘体夹层中化学掺杂Cu原子形成CuxBi2Se3.Cu含量为12at％～15at％,温度为3.8～4.2 K时,CuxBi2Se3块体内呈现超导电性,称之为拓扑超导体.CuxBi2Se3拓扑超导体是一种时间反演不变超导体,体电子态为满带能隙超导态,表面为无能隙Andreev束缚态,并且由于强自旋-轨道耦合效应具有三维狄拉克能带结构.科学家在CuxBi2Se3拓扑超导体中捕捉到了长期以来寻找的零质量零电荷的马拉约那费米子.马拉约那费米子不被附近的粒子、原子吸引或排斥,强烈对抗无序和杂质,这种容错特性将有效保护脆弱的量子态不受侵害,为将来自旋量子学和量子计算机的实现提供新平台.本文针对CuxBi2Se3拓扑超导体这一新型量子材料论述其理论和实验研究进展,然后结合材料科学学科特征论述CuxBi2Se3掺杂特性和反位缺陷形成特征,提出通过控制反位缺陷浓度和合理掺杂提高CuxBi2Se3的物理和化学性能的理论.
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