研究基片斜切角度对YBCO薄膜微观结构及超导电性能的影响.采用脉冲激光沉积(PLD)法在0°~6°斜切(001)SrTiO3基片上制备了具有c取向的YBCO薄膜.用XRD和TEM对薄膜微观结构进行了分析,用标准四引线法测定薄膜电阻-温度关系,从而确定薄膜的超导电性能.结果表明,随斜切角度的增大,薄膜晶体质量下降,晶格弯曲畸变程度增大,超导临界转变温度降低,转变宽度增大.
参考文献
[1] | Lippmaa M;Nakagawa N;Kawasaki M et al.[J].Applied Physics Letters,1999,74:3543. |
[2] | Gan Q;Rao RA;Eom CB .Control of the growth and domain structure of epitaxial SrRuO3 thin films by vicinal (001) SrTiO3 substrates[J].Applied physics letters,1997(15):1962-1964. |
[3] | Xie MH.;Zhu WK.;Zheng LX.;Wu HS.;Tong SY.;Seutter SM. .Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy[J].Physical review letters,1999(13):2749-2752. |
[4] | Tejedor P;(S)milauer P;Joyce B A .[J].Surface Science,1999,424:L309. |
[5] | Nie J C;Takashima H;Terada N et al.[J].Japanese Journal of Applied Physics,1999,38:L1499. |
[6] | Nie J C;Shoji A;Koyanagi M et al.[J].Japanese Journal of Applied Physics,1998,37:L1014. |
[7] | Haage T;Habermeier HU .[J].Zegenhagen J Surf Sci,1997,370:L158. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%