欢迎登录材料期刊网

材料期刊网

高级检索

本文建立了硅烷和氢气体系中气体动量、热量和质量同时传递,并且耦合硅烷热分解反应的多晶硅气相沉积模型,选择适宜的物理模型和边界条件通过流体力学软件Fluent 6.3.26进行数值模拟.之后模拟了进气组成、反应温度、反应压力及进口速度等因素对沉积特性的影响,得到结论:当进气组成、反应温度和反应压力增大时,硅的沉积速率增大、单位能耗降低;当进气速度增大时,硅的沉积速率和单位能耗均呈增大趋势;在进口区域硅沉积速率随着硅棒延伸增大,在离进口较远的区域,硅沉积速率随着硅棒延伸而减小.

参考文献

[1] Li J L;Chen G H;Zhang P et al.Technical Challlenges and Progress in Fluided Bed Chemical Vapor Deposition of Polysilicon[J].Chemical Journal of Chemical Enginering,2011,19(05):747-753.
[2] del Coso G;Tobias I;Canizo C;Luque A .Temperature homogeneity of polysilicon rods in a Siemens reactor[J].Journal of Crystal Growth,2007(1):165-170.
[3] 李汉.西门子法多晶硅还原炉气相沉积反应探讨[J].新材料产业,2011(10):77-79.
[4] Mara W;Herring R;Hunt L.Handbook of Semiconductor Silicon Technology[M].Noyes Publication,1990:49-61.
[5] Filtvedt, W.O.;Javidi, M.;Holt, A.;Melaaen, M.C.;Marstein, E.;Tathgar, H.;Ramachandran, P.A. .Development of fluidized bed reactors for silicon production[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2010(12):1980-1995.
[6] Coltrin M E;Kee R J;Miller J A .A Mathematical Model of the Coupled Fluid Mechanics and Chemical Kinetics in a Chemical Vapor Deposition Reactor[J].Journal of the Electrochemical Society,1984,131(02):425-434.
[7] Coltrin M E;Kee R J;Miller J A .A Mathematical Modal of Silicon Chemical Vapor Deposition[J].Journal of the Electrochemical Society,1986,133(06):1206-1213.
[8] Tirtowidjojo M;pollard R .Elementary Processes and Rate-limiting Factors in MOVPE of GaAs[J].Journal of Crystal Growth,1988,93(04):108-114.
[9] Hashimoto K;Miura K;T Masuda et al.Growth Kinetics of Polycrystalline Silicon from Silane by Thermal Chemical Vapor Deposition Method[J].Journal of the Electrochemical Society,1990,137(03):1000-1007.
[10] W.T.Cheng;H.C.Li;C.N.Huang .Simulation and optimization of silicon thermal CVD through CFD integrating Taguchi method[J].Chemical engineering journal,2008(3):603-613.
[11] Van Veldhuizen S;Vuik C;Kleijn CR .Comparison of numerical methods for transient CVD simulations[J].Surface & Coatings Technology,2007(22/23):8859-8862.
[12] Jong-Hyun Han;Do-Young Yoon .3D CFD for Chemical Transport Profiles in a Rotating Disk CVD Reactor[J].3D Research,2010,2:26-30.
[13] C.Guenther;M.Syamlal .The effect of numerical diffusion on simulation of isolated bubbles in a gas-solid fluidized bed[J].Powder Technology,2001(2/3):142-154.
[14] Reuge N;Cadoret L;Caussat B .Multifluid Eulerian Modelling of a Silicon Fluidized Bed Chemical Vapor Deposition Process:Analysis of Various Kinetic Models[J].Chemical Engineer Journal,2009,148:506-551.
[15] 王向阳,方珍意,蔡以超,张力强,肖红涛.CVD法生长ZnSe的工艺分析[J].人工晶体学报,2004(02):235-237.
[16] 黄海宾,沈鸿烈,唐正霞,吴天如,张磊.热丝CVD法在单晶硅衬底上低温外延生长Si和Ge薄膜的研究[J].人工晶体学报,2010(03):603-607.
[17] del Coso G;del Canizo C;Luque A .Chemical vapor deposition model of polysilicon in a trichlorosilane and hydrogen system[J].Journal of the Electrochemical Society,2008(6):D485-D491.
[18] Eversteyn F C;Severin P J W;J v d Brekel C H et al.A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor[J].Journal of the Electrochemical Society,1970,117(07):925-931.
[19] 黄国强,毛俊楠,王红星,华超.三氯氢硅和氢气系统的气相沉积三维模拟[J].人工晶体学报,2012(03):680-686.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%