采用微波等离子体化学气相沉积法,利用CH4、SiO2和Ar的混合气体在单晶硅片基底上制备出高质量的超纳米金刚石薄膜.表征结果显示,制备的薄膜致密而均匀,晶粒平均尺寸约7.47nm,表面粗糙度约15.72nm,并且其金刚石相的物相纯度相对较高,是质量优异的超纳米金刚石薄膜材料.
High-quality ultrananocrystalline diamond film is prepared on single crystal Si with Ar,CH4 ,CO2 using microwave plasma chemical vapor deposition(MPCVD) technology. The results show that the high-quality thin film is compact and homogeneous, and its average crystalline grains and surface roughness are nearly 7. 47nm and 15.72nm, respectively. And the film aslo has a higher diamond phase purity.
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